Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress by Payman G. Aminzadeh

Cover of: Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress | Payman G. Aminzadeh

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  • Metal oxide semiconductor field-effect transistors.,
  • Hot carriers.

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Statementby Payman G. Aminzadeh.
The Physical Object
Pagination56 leaves, bound. :
Number of Pages56
ID Numbers
Open LibraryOL15200529M

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Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress. Abstract. Graduation date: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel\ud MOSFETs under static (DC) stress are studied in order to establish the degradation\ud mechanisms of such devices.

Degradation is monitored as a function. In this work we present new results which illustrate the impact of hot carrier (HC) degradation on the low frequency (1/f) noise behaviour of submicron p channel MOSFETs. Submicron p channel MOSFETs were subjected to HC stress at a range of gate bias conditions, and the response of the low frequency noise was recorded.

The results obtained are in marked contrast to the reported influence. Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress.

The results show that although strained devices have a larger mobility, they are more sensitive to CHC : Qian Wu, Marc Porti, Albin Bayerl, Javier Martin-Martínez, Rosana Rodriguez, Montserrat Nafria, Xavi. Introduction. A critical design issue for metal-oxide-semiconductor field-effect transistors (MOSFETs) is stress-induced degradation which limits the operating lifetimes of r, despite more than 25 years of research on this subject, even the basic mechanisms of degradation have remained subjects of debate, and the modeling of degradation remains an essentially empirical Cited by: Chapters III presents the issues speci c to hot-carrier injection in n-channel MOSFETs.

As a part of this work, a set of stressing experiments are suggested to study the various aspects of device degradation in n-channel MOSFETs com-prehensively. In order to predict the impact of hot-carrier induced device degradation File Size: KB.

We review the hot-carrier effects and reliability problem in MOSFET. The mechanisms that produce the substrate and gate current are discussed, and the various mechanisms for hot-carrier degradation Cited by: Materials Science and t-ngineerit~g, B I 5 I t)92i 1 (i4 1(~,~ Micronic n-channel MOSFET degradation under strong and short-time hot-carrier stress E Djahli, C.

Plossu and B. Balland Laboratoire de Physique de la Mati~re (URA-CNRS ) Bat, I.N.S.A. Lyon, 20 avenue Albert Einstein, Villeurbanne Cedex (France) (Received June 1, ) Abstract We have carried out Cited by: 4.

We study the impact of positive bias temperature stress and hot carrier stress on lateral 4H-SiC nMOSFETs. These degradation mechanisms are prominent in silicon based devices where both create oxide as well as interface traps.

For SiC MOSFETs only limited information regarding these mechanisms is available. We transfer the charge pumping technique, known from Si MOSFETs, reliably to SiC Cited by: 6. for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Substrate Current Under DC Stress.” 10 1 IDLIN Degradation (%) 1 10 Time (seconds) S Hot Carrier Linear Drain Current Degradation Data.

The DC pulse hot-carrier-stress effects on the degradation in gate-induced drain leakage (GIDL) current in nMOSFETs in a high field regime and the mechanisms of stress-induced degradation. Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs Article in Materials Science Forum February with 15 Reads.

Procedure for measuring N-channel MOSFET hot-carrier-induced degradation under DC stress, [2] JEDEC Solid State Technology Association, EIA/JESD A procedure for measuring P-channel MOSFEThot-carrier-induced degradation at maximum gate current under DC stress, [3] C.

Blat, E. Nicollian, and E. Poindexter, “Mech. Abstract. In Chapter 1, the degradation of MOS transistors under DC stress conditions was considered. In a real circuit, however, most of the devices are operated dynamically, on account of which the degradation under Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress book stress conditions has gained increased by: 4.

Finally, the peculiar degradation behavior of n-channel transistors under alternating injection conditions is discussed and fully explained based on the static stress degradation model View Show.

In presenting we stated that the activation rate constant k hc,n can be understood in terms of a ‘hard’ defect activation threshold energy Φ and a constant activation cross-section σ D,er, one sees from (), that Φ is a statistical variable distributed according to the function D allowing the comparison of the extracted model parameters with published results, it may be Cited by: 1.

First, voltage overshoot, due to internal MOSFET parasitic capacitances, causes enhanced hot-carrier degradation. Second, the quasi-static approximation is found to be invalid at high frequencies.

Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs Jae Hoon Leea, Jin-Woo Hanb,ChongGunYua, Jong Tae Parka,⁎ a Department of Electronics Engineering, Incheon National University, # Academi-Ro Yoonsu-Gu, IncheonSouth Korea b NASA Ames Research Center, Moffett Field, CAUSA article info abstract.

SOI partially depleted body-contact MOSFETs were subjected to static and dynamic hot carrier stress. Drain current was investigated by means of Deep Level Transient Spectroscopy and switch-ON.

The goal of this research is to model the drain current and 1/f noise degradation characteristics of n-channel MOSFETs. In this paper, we present the implementation of hot carrier degradation into drain current equations of BSIM4 model.

We show simulation results of the DC drain current degradation, and then 1/f noise voltage density simulation results affected by the drain current : Takuya Totsuka, Hitoshi Aoki, Fumitaka Abe, Yukiko Arai, Shunichiro Todoroki, Masaki Kazumi, Masashi.

Device degradation modelling is more and more important for reliable circuit design. On MOSFET, the threshold voltage drift in time can lead to circuit performance degradation. In this study, V T shift due to Hot Carrier Injection stress is accelerated on small width devices.

V T matching is also degraded during stress as a function of V T Cited by: 3. This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of measurements so that valid comparisons can be made between different technologies, IC processes, and process variations in a simple, consistent and controlled way.

Hot-Carrier Degradation of Sub-micron n-channel MOSFETs Subject to Static Stress CHAPTER 1 INTRODUCTION Metal-oxide-semiconductor field-effect transistors (MOSFETs) are the dominant devices used in today's semiconductor industry. They are widely used in digital as well as analog integrated circuits.

To obtain higher speed and smaller die. Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is considered as the most promising candidate used in deep and super-deep sub-micron region, for it can suppress hot carrier effect and short channel effect deeply.

Based on the hydrodynamic energy transport model, using two-dimensional device simulator Medici, the relation between structure parameters and hot carrier effect. Hot Carrier Degradation in Semiconductor Devices Tibor Grasser (eds.) This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.

Abstract. In this chapter we discuss Channel Hot Carrier (CHC) degradation in high-mobility SiGe and Ge channel pMOSFETs. For Si technologies this degradation mode is of relevance for n-channel devices, while it is often neglected for p-channel devices whose reliability is typically limited by Negative Bias Temperature Instability (NBTI).Cited by: 5.

A lock-in-amplifier based multi-frequency transconductance technique for interface characterization of sub-micron SOI MOSFETs has been implemented and used to study generation of interface states with stress.

The technique has been validated on bulk MOSFETs using charge pumping by: 2. Abstract—We performed channel hot carrier stress on enhancement-mode, inversion-type III-V MOSFETs with Al2O3 gate dielectric.

The stress induces subthreshold swing degradation, increase on the threshold voltage and reduction of drain saturation current. Nonetheless, no appreciable transconductance degradation can be observed at least with a.

wide channel or fin width in FinFETs or tri-gate MOSFETs, a device with narrowchannel orfinwidthshowsmore or lesshotcarrierdegra-dation [1–4]. The less hot carrier (HC) degradation in narrow devices has been explained by a reduced actual stress voltage due to the large voltage drop at the source and drain regions [2],andalessfloating.

Abstract: This paper reports on self heating caused by hot-carrier (HC) stress in packaged thick gate oxide HV LDMOS devices, and how self heating significantly affects HC degradation characteristics.

The time delay between the removal of the HC stress and the parameter measurement significantly after each stress cycle significantly affected the measured HC Idlin/Rdson degradation. The Relation Between Degradation Under DC and RF Stress Conditions of the transistor over a short incremental time of a quasi-static stress DC hot-carrier degradation in n-channel MOSFETs.

Hot-carrier effects in silicon n-channel MOSFETs were investigated as a function of drain voltage (VD) and gate voltage (VG). Impact ionization, gate injection and interface degradation have been observed for qVD (ballistic energy limit) below the threshold energies for these processes. Detailed investigations were done for qVD near.

“Tibor Grasser and the authors of Hot Carrier Degradation in Semiconductor Devices have made a major contribution to the field of hot-carrier degradation.

I am emeritus since and believe that, after reading these great chapters, I could work again at the cutting edge of hot-carrier transport, from the basic physics to modern device.

reliability physics of MOSFETs. For example, hot-carrier-induced MOSFET degradation due to the Si-SiO, interface states has attracted a great deal of interest. It has been shown that Si-SiO, interface states play an important role in the degradation of MOSFETs, and there has been many methods developed to determine this kind of degradation.

Abstract. The Channel Hot Carrier (CHC) degradation mechanisms are studied in 3-dimensional n-FinFET long channel devices, the most degraded condition is at low vertical electric field stress (V G ∼ V D /2) due to the interface degradation by hot carriers, while cold/hot carrier injection to the oxide bulk defect dominates at the high vertical field stress condition (V G = V D).Cited by: 3.

Improved Lifetime Determination of Deep Submicron n-Channel MOSFETs using Charge Pumping Technique and Drain Current Degradation Modeling p. 51 Mechanism of ac-Stress-induced Leakage Current in EEPROM Tunnel Oxides p. 56 Characterization and Simulation of Hot-Carrier Effect on Erasing Gate Current in Flash EEPROMs p.

Introduction It was observed rhat narrow width MOSFET with shallow trench isolation (srD exhibits severe degradation after hot carrier stress as a result of width the case of n-channel MOSFET, it was reported that the hot garrier degradation in nanower device is resulting from extra hot carrier generation and enhanced vertical field at the STI.

We have investigated the impact of plasma-induced charging damage on the hot carrier reliability of n- and p-MOSFET's, including the examination of different stress bias regimes and the statistical distributions of hot carrier failure times.

We found that when electron trapping determines hot carrier failure-as in p-MOSFETs stressed under the peak gate current condition-the median time-to-fail. SPECKBACHER et al.: HOT-CARRIER-INDUCED DEEP-LEVEL DEFECTS 91 substrate. Indeed, a very special highly peaked distribution of [4] A.

Schwerin, W. Hansch, and W. Weber, “The relationship between defects, near the drain and at a oxide charge and device degradation: A comparative study of n- and p- depth (much channel MOSFET?s,37 IEEE Trans. Electron Devices, ED function of gate voltage 1'2; for a conventional n-channel MOSFET before and after hot-carrier stress.

The stress was performed at Vc; = 3 V and trn = 8 V for different stress times t. current arises from tunneling leakage current IT. The higher the gate voltage the smaller the active zone in Fig.

2(c)File Size: KB. Hot carrier stress tests are performed on a class of n-channel LDMOS transistors realized in a mum smart-power technology and designed for radio frequency applications.

The degradation behavior is investigated for various gate lengths and gate oxide thicknesses. An empirical model for the degradation of the drain/source on-state resistance and maximum saturation drain current is proposed.

This work finds abnormal sub-threshold swing (S.S.) degradation under dynamic hot carrier stress (HCS) in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric.

Results indicate that there is no change in S.S. after dynamic HCS due to band-to-band hot hole injection at the drain side which acts to diminish the stress by: 4.on the device structure and stress condition. Generally, the hot-carrier degradation is associated with the effects of hot hole/electron injection in the channel region and/or the drift region of LDMOS transistors.

For RF power circuit design, it is important to evaluate the hot-carrier stress effects on the high-frequency character.R IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL, YO SEPTEMBER Effects of Hot Carrier Induced Interface State Generation in Submicron LDD MOSFET’s Tahui Wang, Chimoon Huang, P.

C. Chou, Steve S.-S. Chung, Member, IEEE, and Tse-En Chang Abstract-A two-dimensional numerical simulation including a new interface state generation model has been developed to.

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